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hwOS tech 3.22 release
author | heinrichsweikamp |
---|---|
date | Mon, 29 Apr 2024 13:05:18 +0200 |
parents | 75e90cd0c2c3 |
children |
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;============================================================================= ; ; File external_flash.inc * combined next generation V3.09.4e ; ; ; Copyright (c) 2011, JD Gascuel, heinrichs weikamp gmbh, all right reserved. ;============================================================================= ; HISTORY ; 2011-08-12 : [mH] creation ; FLASH Memory Layout: ; ; 0x000000 - 0x1FFFFF 2 MB dive profile data, shared ring buffer ; 0x200000 - 0x2FFFFF 1 MB dive header data, last 256 dives, 4 kB / dive ; 0x300000 - 0x3DFFFF 896 kB unused ; 0x3C0000 - 0x3DDFFF 120 kB backup firmware ; 0x3DE000 - 0x3DFFFF 8 kb unused ; 0x3E0000 - 0x3FDFFF 120 kB firmware buffer ; 0x3FE000 - 0x3FFFFF 8 kB reserved for factory use ; Write: WREG -> FLASH with address increment and wrap-around at 0x200000 extern ext_flash_write_byte_0x20_incdc ; with increment of ext_flash_dive_counter extern ext_flash_write_byte_0x20 ; standard flash write extern ext_flash_write_byte_0x20_nodel ; without delete on entering new page ; Write: WREG -> FLASH with address increment and wrap-around at 0x400000 extern ext_flash_write_byte_0x40_nowait ; without wait for use with fast comm (~86us fixed delay due to 115200 Bauds - use with caution) ; Read: block-read FLASH -> WREG extern ext_flash_read_block_start ; initial read of one byte at ext_flash_address:3 extern ext_flash_read_block_0x40 ; subsequent read of next byte(s) with wrap-around at 0x400000 ; extern ext_flash_read_block_0x20 ; subsequent read of next byte(s) with wrap-around at 0x200000 extern ext_flash_read_block_stop ; terminate read ; Erase: extern ext_flash_erase_4kB ; erase one 4kB block starting at ext_flash_address:3 extern ext_flash_erase_range ; erase #WREG 4kB blocks starting at ext_flash_address:3 extern erase_complete_logbook ; erase complete logbook (FLASH and EEPROM) ; Protection: extern ext_flash_enable_protection ; enable write protection extern ext_flash_disable_protection ; disable write protection ; Misc extern ext_flash_read_jedec ; read JEDEC IDs extern ext_flash_inc_address_4kB ; increment address by 0x001000, no check for wrap-around IFDEF _firmware_recovery ; Firmware Copying extern copy_fw_active_to_backup ; copy active firmware code to backup storage extern copy_fw_backup_to_active ; copy backup firmware code to update storage ENDIF ;----------------------------------------------------------------------------- ; Macros ;----------------------------------------------------------------------------- ; read 1 byte from FLASH to WREG with address increment and wrap-around at 0x200000 ; ; the byte read is also copied to ext_flash_rw ; FLASH_CW_READ_0x20 macro extern ext_flash_read_byte_0x20 call ext_flash_read_byte_0x20 ; read from FLASH to WREG endm ; read 1 byte from FLASH to WREG with address increment and wrap-around at 0x400000 ; ; the byte read is also copied to ext_flash_rw ; FLASH_CW_READ_0x40 macro extern ext_flash_read_byte_0x40 call ext_flash_read_byte_0x40 ; read from FLASH to WREG endm ; read 1 byte from FLASH to memory with address increment and wrap-around at 0x200000 ; ; mem_address: target address in memory, must be in current bank! ; FLASH_CC_READ_0x20 macro mem_address extern ext_flash_read_byte_0x20 call ext_flash_read_byte_0x20 ; read from FLASH to WREG movwf mem_address ; copy from WREG to memory endm ; read 2 bytes from FLASH to memory with address auto-increment and wrap-around at 0x200000 ; ; mem_address: target address in memory, must be in current bank! ; FLASH_II_READ_0x20 macro mem_address extern ext_flash_read_byte_0x20 call ext_flash_read_byte_0x20 ; read 1st byte from FLASH to WREG movwf mem_address+0 ; copy 1st byte from WREG to memory call ext_flash_read_byte_0x20 ; read 2nd byte from FLASH to WREG movwf mem_address+1 ; copy 2nd byte from WREG to memory endm ; read a range of data from FLASH to memory (destroys WREG, FSR1) ; ; memory_start: address:2 containing start address in memory ; range : literal:1 giving the number of bytes to read (1-256) ; ; Attention: function does NOT check for a wrap-around! ; ; -> flash_start is at ext_flash_address ; -> ext_flash_address is NOT changed ; FLASH_RR_READ macro memory_start, range lfsr FSR1,memory_start ; set start address in memory movlw low(range) ; set size of range to read extern ext_flash_read_range call ext_flash_read_range ; execute range-read endm ; write a range of data from memory to FLASH (destroys WREG, FSR1) ; ; memory_start: address:2 containing start address in memory ; range : literal:1 giving the number of bytes to write (1-256) ; ; Attention: low(ext_flash_address) + range must be <= 256 ! ; ; -> flash_start is at ext_flash_address ; -> old flash chip: ext_flash_address is incremented according to range parameter ; -> new flash chip: ext_flash_address is set to start of next 256 byte block ; FLASH_RR_WRITE macro memory_start, range lfsr FSR1,memory_start ; set start address in memory movlw low(range) ; set size of range to write extern ext_flash_write_range call ext_flash_write_range ; execute range-write endm ; set ext_flash_address to a given address ; EXT_FLASH_ADDR macro address movlw LOW (address ) movwf ext_flash_address+0 movlw HIGH (address & 0xFFFF) movwf ext_flash_address+1 movlw UPPER (address ) movwf ext_flash_address+2 endm ; move forward in FLASH with wrap-around at 0x400000 to 0x000000 ; ; increment: literal (1-255) ; EXT_FLASH_INC_ADDRESS_0x40 macro increment movlw increment extern ext_flash_inc_address_0x40_exec call ext_flash_inc_address_0x40_exec endm ; move forward in FLASH with wrap-around at 0x200000 to 0x000000 ; ; increment: literal (1-255) ; EXT_FLASH_INC_ADDRESS_0x20 macro increment movlw increment extern ext_flash_inc_address_0x20_exec call ext_flash_inc_address_0x20_exec endm ; decrement length counter by 1 ; EXT_FLASH_DEC_LENGTH macro extern ext_flash_dec_length_exec call ext_flash_dec_length_exec endm