Mercurial > public > hwos_code
view src/eeprom_rs232.asm @ 629:237931377539
3.07 stable release
author | heinrichsweikamp |
---|---|
date | Fri, 29 Nov 2019 18:48:11 +0100 |
parents | cd58f7fc86db |
children | 185ba2f91f59 |
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;============================================================================= ; ; File eeprom_rs232.asm combined next generation V3.06.2 ; ; Internal EEPROM, RS232 ; ; Copyright (c) 2011, JD Gascuel, HeinrichsWeikamp, all right reserved. ;============================================================================= ; HISTORY ; 2011-08-06 : [mH] moving from OSTC code #include "hwos.inc" #include "wait.inc" #include "shared_definitions.h" #include "rtc.inc" extern lt2942_charge_done ;----------------------------------------------------------------------------- ; Macros write_int_eeprom macro eeprom_address movlw eeprom_address call write_int_eeprom_1 endm read_int_eeprom macro eeprom_address movlw eeprom_address call read_int_eeprom_1 endm ;----------------------------------------------------------------------------- ; Reserved memory locations in EEPROM eeprom code 0xF00000+0x10 ; skip SERIAL number - it should not be overwritten global eeprom_serial_save global eeprom_opt_backup eeprom_serial_save res 2 eeprom_opt_backup res 0x3E ;----------------------------------------------------------------------------- ee_rs232 CODE ;============================================================================= global write_int_eeprom_1 write_int_eeprom_1: movwf EEADR bra write_eeprom ; writes and "returns" after write global read_int_eeprom_1 read_int_eeprom_1: movwf EEADR bra read_eeprom ; reads and "returns" after write ;============================================================================= ; read from internal EEPROM ; ; Input: EEADRH:EEADR = EEPROM address ; Output: EEDATA ; Trashed: NONE ; global read_eeprom read_eeprom: bcf EECON1,EEPGD bcf EECON1,CFGS bsf EECON1,RD return ;============================================================================= ; write into internal EEPROM ; ; Input: EEADRH:EEADR = EEPROM address ; EEDATA = byte to write ; Trashed: WREG ; global write_eeprom write_eeprom: bcf EECON1,EEPGD bcf EECON1,CFGS bsf EECON1,WREN bcf INTCON,GIE ; disable interrupts for the next 5 instructions movlw 0x55 movwf EECON2 movlw 0xAA movwf EECON2 bsf EECON1,WR write_eep2: btfsc EECON1,WR bra write_eep2 ; wait about 4ms... bcf EECON1,WREN bsf INTCON,GIE ; ...but the flag for the ISR routines were still set, so they will interrupt now! return ;============================================================================= global disable_ir_s8 disable_ir_s8: banksel TXSTA2 ; select bank for IO register access clrf TXSTA2 clrf RCSTA2 banksel common ; back to bank common bcf PIE3,RC2IE ; disable RC2 INT bcf ir_power ; IR off bcf mcp_power ; power-down instrumentation amp bsf s8_npower ; power-down S8 digital interface bcf s8_digital_avail ; digital S8 interface not available return global enable_ir_s8 enable_ir_s8: ;initialize serial port2 (TRISG2) btfsc analog_o2_input ; do we have an analog input? bra enable_s8 ; YES - search for S8 digital input ; NO - start IR digital input banksel BAUDCON2 ; - select bank for IO register access movlw b'00100000' ; - BRG16=0, inverted for IR movwf BAUDCON2 movlw b'00100000' ; - BRGH=0, SYNC=0 movwf TXSTA2 movlw .102 ; - SPBRGH:SPBRG = .102 : 2403 BAUD @ 16 MHz movwf SPBRG2 clrf SPBRGH2 movlw b'10010000' movwf RCSTA2 banksel common ; - back to bank common bsf ir_power ; - power-up IR btfss ir_power ; - power-up confirmed? bra $-6 ; NO - loop and wait bsf PIE3,RC2IE ; - enable RC2 INT return ; - done enable_s8: banksel TXSTA2 ; select bank for IO register access clrf TXSTA2 clrf RCSTA2 banksel common ; back to bank common ; Check for Digital/Analog bsf s8_npower ; power-down S8 HUD WAITMS d'2' ; very short delay bsf mcp_power ; power-up instrumentation amp btfss mcp_power bra $-4 ; It may be digital, check for voltage when isolator is powered bcf s8_npower ; power S8 HUD WAITMS d'1' ; wait 1 ms btfsc PORTG,2 ; RX2=1? bra enable_s8_2 ; YES - digital WAITMS d'30' ; NO - wait 30 ms btfsc PORTG,2 ; - RX2=1? bra enable_s8_2 ; YES - digital ;bra enable_s8_analog ; NO - not found, set to analog (fail-safe) enable_s8_analog: ; S8 analog interface bsf s8_npower ; power-down S8 HUD bcf s8_digital_avail ; digital S8 interface not available return enable_s8_2: ; configure S8 digital interface banksel BAUDCON2 ; select bank for IO register access movlw b'00000000' ; BRG16=0, normal for S8 movwf BAUDCON2 movlw b'00100000' ; BRGH=0, SYNC=0 movwf TXSTA2 movlw .25 ; SPBRGH:SPBRG = .25 : 9615 BAUD @ 16 MHz movwf SPBRG2 movlw b'10010000' movwf RCSTA2 banksel common ; back to bank common bsf s8_digital_avail ; digital S8 interface available return ;============================================================================= global enable_rs232 enable_rs232: call request_speed_normal ; request CPU speed change to normal speed enable_rs232_1: btfss speed_is_normal ; speed = normal? bra enable_rs232_1 ; NO - wait for ISR to adjust speed bcf PORTE,0 ; start comm bsf PORTJ,2 ; /Reset (for very old OSTC sport) ;initialize serial port1 (TRISC6/7) movlw b'00100100' ; BRGH=1, SYNC=0 movwf TXSTA1 movlw b'10010000' movwf RCSTA1 return global disable_rs232 disable_rs232: clrf RCSTA1 clrf TXSTA1 ; UART disable bcf PORTC,6 ; TX hard to GND bsf PORTE,0 ; stop comm bcf PORTJ,2 ; /Reset (for very old OSTC sport) return global rs232_wait_tx rs232_wait_tx: btfss TXSTA1,TRMT ; RS232 busy? bra rs232_wait_tx ; YES - wait... btfss ble_available ; ble available? return ; NO - done btfsc NRTS ; wait for Bluetooth module bra rs232_wait_tx ; YES - wait... return ; done global rs232_wait_tx2 rs232_wait_tx2: banksel TXSTA2 ; select bank for IO register access rs232_wait_tx2_loop: btfss TXSTA2,TRMT ; RS232 busy? bra rs232_wait_tx2_loop ; YES - wait... banksel common ; back to bank common return ; done global rs232_get_byte rs232_get_byte: bcf rs232_rx_timeout ; clear timeout flag ; set timeout timer to approx. 400 ms: clrf uart_timeout_timer+0 ; set low byte of timeout timer to 0 clrf uart_timeout_timer+1 ; set high byte of timeout timer to 0 ; set upper byte of timeout timer to 10 without using WREG: clrf uart_timeout_timer+2 ; first clear to 0, then... bsf uart_timeout_timer+2,1 ; set bit 1 (value 2), bsf uart_timeout_timer+2,3 ; and bit 3 (value 8). rs232_get_byte_loop: btfsc PIR1,RCIF ; received a data byte? return ; YES - done decfsz uart_timeout_timer+0,F ; NO - decrement low byte of timer, became zero? bra rs232_get_byte_loop ; NO - loop decfsz uart_timeout_timer+1,F ; YES - decrement high byte of timer, became zero? bra rs232_get_byte_loop ; NO - loop decfsz uart_timeout_timer+2,F ; YES - decrement upper byte of timer, became zero? bra rs232_get_byte_loop ; NO - loop bsf rs232_rx_timeout ; YES - set timeout flag bcf RCSTA1,CREN ; - clear receiver status bsf RCSTA1,CREN ; - ... return ; - and return anyway ;============================================================================= global do_logoffset_common_write do_logoffset_common_write: movff lo,EEDATA write_int_eeprom 0x0D movff hi,EEDATA write_int_eeprom 0x0E return global do_logoffset_common_read do_logoffset_common_read: clrf EEADRH read_int_eeprom 0x0D movff EEDATA,lo read_int_eeprom 0x0E movff EEDATA,hi return ;============================================================================= global update_battery_registers update_battery_registers: ; save battery gauge to EEPROM 0x07-0x0C bsf block_battery_gauge ; suspend ISR from accessing the battery gauge clrf EEADRH movff battery_gauge+0,EEDATA write_int_eeprom 0x07 movff battery_gauge+1,EEDATA write_int_eeprom 0x08 movff battery_gauge+2,EEDATA write_int_eeprom 0x09 movff battery_gauge+3,EEDATA write_int_eeprom 0x0A movff battery_gauge+4,EEDATA write_int_eeprom 0x0B movff battery_gauge+5,EEDATA write_int_eeprom 0x0C movff battery_type,EEDATA ; =0:1.5V, =1:3.6V Saft, =2:LiIon 3.7V/0.8Ah, =3:LiIon 3.7V/3.1Ah, =4: LiIon 3.7V/2.3Ah write_int_eeprom 0x0F bcf block_battery_gauge ; allow ISR to access the battery gauge again return global retrieve_battery_registers retrieve_battery_registers: ; retrieve battery gauge from EEPROM 0x07-0x0C bsf block_battery_gauge ; suspend ISR from accessing the battery gauge clrf EEADRH read_int_eeprom 0x07 movff EEDATA,battery_gauge+0 read_int_eeprom 0x08 movff EEDATA,battery_gauge+1 read_int_eeprom 0x09 movff EEDATA,battery_gauge+2 read_int_eeprom 0x0A movff EEDATA,battery_gauge+3 read_int_eeprom 0x0B movff EEDATA,battery_gauge+4 read_int_eeprom 0x0C movff EEDATA,battery_gauge+5 read_int_eeprom 0x0F movff EEDATA,battery_type ; =0:1.5V, =1:3,6V Saft, =2:LiIon 3,7V/0.8Ah, =3:LiIon 3,7V/3.1Ah, =4: LiIon 3,7V/2.3Ah bcf block_battery_gauge ; allow ISR to access the battery gauge again return ;============================================================================= global vault_decodata_into_eeprom vault_decodata_into_eeprom: ; Vault in EEPROM 512...1023 ; Write 0xAA at 512 to indicate valid data in vault ; Store last time/date ; Store 0x700 to 0x780 (pres_tissue_N2 and pres_tissue_He) movlw HIGH .512 ; =2 movwf EEADRH ; set EEPROM address, high byte ; indicate valid data in vault movlw 0xAA movwf EEDATA write_int_eeprom .0 ; store date/time SMOVSS rtc_year,rtc_latched_year ; ISR-safe 6 byte copy of date and time movff rtc_latched_year+0,EEDATA write_int_eeprom .1 movff rtc_latched_year+1,EEDATA write_int_eeprom .2 movff rtc_latched_year+2,EEDATA write_int_eeprom .3 movff rtc_latched_year+3,EEDATA write_int_eeprom .4 movff rtc_latched_year+4,EEDATA write_int_eeprom .5 movff rtc_latched_year+5,EEDATA write_int_eeprom .6 movff int_O_CNS_current+0,EEDATA ; get current CNS, low byte write_int_eeprom .7 ; store value movff int_O_CNS_current+1,EEDATA ; get current CNS, high byte write_int_eeprom .8 ; store value movff int_O_desaturation_time+0,EEDATA; get desaturation time, low byte write_int_eeprom .9 ; store value movff int_O_desaturation_time+1,EEDATA; get desaturation time, high byte write_int_eeprom .10 ; store value SMOVII surface_interval_mins,mpr ; ISR-safe copy of surface interval movff mpr+0,EEDATA ; get surface interval, low byte write_int_eeprom .11 ; store value movff mpr+1,EEDATA ; get surface interval, high byte write_int_eeprom .12 ; store value movff int_O_lead_supersat+0,EEDATA ; get leading tissue's supersaturation, value is limited to 255 so only the lower byte is used for the value write_int_eeprom .13 movff int_O_nofly_time+0,EEDATA ; get time, low byte write_int_eeprom .14 ; store value movff int_O_nofly_time+1,EEDATA ; get time, high byte write_int_eeprom .15 ; store value ; tissue data from 16 to 144 movlw .16 movwf EEADR movlw .128 ; 2 * 16 floats = 2*16*4 byte = 128 byte movwf lo lfsr FSR1,0x700 ; pres_tissue_N2+0 vault_decodata_into_eeprom2: movff POSTINC1,EEDATA call write_eeprom ; EEDATA into EEPROM@EEADR incf EEADR,F decfsz lo,F ; all done? bra vault_decodata_into_eeprom2 ; NO - loop clrf EEADRH ; YES - reset EEPROM pointer return ; - done global restore_decodata_from_eeprom restore_decodata_from_eeprom: movlw LOW .512 ; =0 movwf EEADR ; set EEPROM address, low byte movlw HIGH .512 ; =2 movwf EEADRH ; set EEPROM address, high byte ; restore date and time read_int_eeprom .1 movff EEDATA,rtc_latched_year read_int_eeprom .2 movff EEDATA,rtc_latched_month read_int_eeprom .3 movff EEDATA,rtc_latched_day read_int_eeprom .4 movff EEDATA,rtc_latched_hour read_int_eeprom .5 movff EEDATA,rtc_latched_mins read_int_eeprom .6 movff EEDATA,rtc_latched_secs call rtc_set_rtc ; write time and date to RTC module read_int_eeprom .7 ; read CNS%, low byte movff EEDATA,int_O_CNS_current+0 ; restore value read_int_eeprom .8 ; read CNS%, high byte movff EEDATA,int_O_CNS_current+1 ; restore value read_int_eeprom .9 ; read desaturation time, low byte movff EEDATA,int_O_desaturation_time+0; restore value read_int_eeprom .10 ; read desaturation time, high byte movff EEDATA,int_O_desaturation_time+1; restore value read_int_eeprom .11 ; read surface interval, low byte movff EEDATA,mpr+0 ; cache value in mpr read_int_eeprom .12 ; read surface interval, high byte movff EEDATA,mpr+1 ; cache value in mpr SMOVII mpr,surface_interval_mins ; ISR-safe copy-back of surface interval read_int_eeprom .13 ; read leading tissue's supersaturation movff EEDATA,int_O_lead_supersat+0 ; restore value read_int_eeprom .14 ; read no-fly/no-altitude time, low byte movff EEDATA,int_O_nofly_time+0 ; restore value read_int_eeprom .15 ; read no-fly/no-altitude time, high byte movff EEDATA,int_O_nofly_time+1 ; restore value ; tissue data from 16 to 144 movlw .16 movwf EEADR movlw .128 ; 2 * 16 floats = 2*16*4 byte = 128 byte movwf lo lfsr FSR1,0x700 ; pres_tissue_N2+0 restore_decodata_from_eeprom2: call read_eeprom ; EEPROM@EEADR into EEDATA movff EEDATA,POSTINC1 incf EEADR,F decfsz lo,F ; all done? bra restore_decodata_from_eeprom2 ; NO - loop clrf EEADRH ; YES - revert EEPROM high address pointer to default return ; - done ;============================================================================= global reset_battery_pointer ; called from comm and menu tree global reset_battery_internal_only reset_battery_pointer: ; reset battery pointer 0x07-0x0C and battery gauge btfsc battery_gauge_available ; something to reset? call lt2942_charge_done ; YES - reset accumulating registers to 0xFFFF reset_battery_internal_only: clrf EEADRH clrf EEDATA ; delete to zero write_int_eeprom 0x07 write_int_eeprom 0x08 write_int_eeprom 0x09 write_int_eeprom 0x0A write_int_eeprom 0x0B write_int_eeprom 0x0C bsf block_battery_gauge ; suspend ISR from accessing the battery gauge banksel battery_gauge ; select bank ISR data clrf battery_gauge+0 ; null the battery gauge clrf battery_gauge+1 clrf battery_gauge+2 clrf battery_gauge+3 clrf battery_gauge+4 clrf battery_gauge+5 banksel common ; back to bank common bcf block_battery_gauge ; allow ISR to access the battery gauge again movlw .100 movwf batt_percent ; set battery level to 100% return ;============================================================================= global eeprom_reset_logbook_pointers eeprom_reset_logbook_pointers: clrf EEADRH ; make sure to select EEPROM bank 0 clrf EEDATA write_int_eeprom .4 write_int_eeprom .5 write_int_eeprom .6 write_int_eeprom .2 ; also delete total dive counter write_int_eeprom .3 write_int_eeprom .16 write_int_eeprom .17 ; ...and the backup counter, too return ;============================================================================= END