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diff Common/Drivers/STM32F4xx_HAL_DRIVER_v120/Src/stm32f4xx_hal_flash_ex.c @ 38:5f11787b4f42
include in ostc4 repository
author | heinrichsweikamp |
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date | Sat, 28 Apr 2018 11:52:34 +0200 |
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--- /dev/null Thu Jan 01 00:00:00 1970 +0000 +++ b/Common/Drivers/STM32F4xx_HAL_DRIVER_v120/Src/stm32f4xx_hal_flash_ex.c Sat Apr 28 11:52:34 2018 +0200 @@ -0,0 +1,1308 @@ +/** + ****************************************************************************** + * @file stm32f4xx_hal_flash_ex.c + * @author MCD Application Team + * @version V1.2.0 + * @date 26-December-2014 + * @brief Extended FLASH HAL module driver. + * This file provides firmware functions to manage the following + * functionalities of the FLASH extension peripheral: + * + Extended programming operations functions + * + @verbatim + ============================================================================== + ##### Flash Extension features ##### + ============================================================================== + + [..] Comparing to other previous devices, the FLASH interface for STM32F427xx/437xx and + STM32F429xx/439xx devices contains the following additional features + + (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write + capability (RWW) + (+) Dual bank memory organization + (+) PCROP protection for all banks + + ##### How to use this driver ##### + ============================================================================== + [..] This driver provides functions to configure and program the FLASH memory + of all STM32F427xx/437xx andSTM32F429xx/439xx devices. It includes + (#) FLASH Memory Erase functions: + (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and + HAL_FLASH_Lock() functions + (++) Erase function: Erase sector, erase all sectors + (++) There are two modes of erase : + (+++) Polling Mode using HAL_FLASHEx_Erase() + (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT() + + (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to : + (++) Set/Reset the write protection + (++) Set the Read protection Level + (++) Set the BOR level + (++) Program the user Option Bytes + (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to : + (++) Extended space (bank 2) erase function + (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2) + (++) Dual Boot activation + (++) Write protection configuration for bank 2 + (++) PCROP protection configuration and control for both banks + + @endverbatim + ****************************************************************************** + * @attention + * + * <h2><center>© COPYRIGHT(c) 2014 STMicroelectronics</center></h2> + * + * Redistribution and use in source and binary forms, with or without modification, + * are permitted provided that the following conditions are met: + * 1. Redistributions of source code must retain the above copyright notice, + * this list of conditions and the following disclaimer. + * 2. Redistributions in binary form must reproduce the above copyright notice, + * this list of conditions and the following disclaimer in the documentation + * and/or other materials provided with the distribution. + * 3. Neither the name of STMicroelectronics nor the names of its contributors + * may be used to endorse or promote products derived from this software + * without specific prior written permission. + * + * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" + * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE + * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE + * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE + * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL + * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR + * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER + * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, + * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE + * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. + * + ****************************************************************************** + */ + +/* Includes ------------------------------------------------------------------*/ +#include "stm32f4xx_hal.h" + +/** @addtogroup STM32F4xx_HAL_Driver + * @{ + */ + +/** @defgroup FLASHEx FLASHEx + * @brief FLASH HAL Extension module driver + * @{ + */ + +#ifdef HAL_FLASH_MODULE_ENABLED + +/* Private typedef -----------------------------------------------------------*/ +/* Private define ------------------------------------------------------------*/ +/** @addtogroup FLASHEx_Private_Constants + * @{ + */ +#define SECTOR_MASK ((uint32_t)0xFFFFFF07) +#define FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */ +/** + * @} + */ + +/* Private macro -------------------------------------------------------------*/ +/* Private variables ---------------------------------------------------------*/ +/** @addtogroup FLASHEx_Private_Variables + * @{ + */ +extern FLASH_ProcessTypeDef pFlash; +/** + * @} + */ + +/* Private function prototypes -----------------------------------------------*/ +/** @addtogroup FLASHEx_Private_Functions + * @{ + */ +/* Option bytes control */ +static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks); +static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks); +static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks); +static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level); +static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby); +static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level); +static uint8_t FLASH_OB_GetUser(void); +static uint16_t FLASH_OB_GetWRP(void); +static FlagStatus FLASH_OB_GetRDP(void); +static uint8_t FLASH_OB_GetBOR(void); + +#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) +static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector); +static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector); +#endif /* STM32F401xC || STM32F401xE || STM32F411xE */ + +#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) +static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks); +static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks); +static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig); +#endif /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */ + +extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout); +/** + * @} + */ + +/* Exported functions --------------------------------------------------------*/ +/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions + * @{ + */ + +/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions + * @brief Extended IO operation functions + * +@verbatim + =============================================================================== + ##### Extended programming operation functions ##### + =============================================================================== + [..] + This subsection provides a set of functions allowing to manage the Extension FLASH + programming operations Operations. + +@endverbatim + * @{ + */ +/** + * @brief Perform a mass erase or erase the specified FLASH memory sectors + * @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that + * contains the configuration information for the erasing. + * + * @param[out] SectorError: pointer to variable that + * contains the configuration information on faulty sector in case of error + * (0xFFFFFFFF means that all the sectors have been correctly erased) + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError) +{ + HAL_StatusTypeDef status = HAL_ERROR; + uint32_t index = 0; + + /* Process Locked */ + __HAL_LOCK(&pFlash); + + /* Check the parameters */ + assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + /*Initialization of SectorError variable*/ + *SectorError = 0xFFFFFFFF; + + if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) + { + /*Mass erase to be done*/ + FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + /* if the erase operation is completed, disable the MER Bit */ + FLASH->CR &= (~FLASH_MER_BIT); + } + else + { + /* Check the parameters */ + assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); + + /* Erase by sector by sector to be done*/ + for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++) + { + FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + /* If the erase operation is completed, disable the SER Bit */ + FLASH->CR &= (~FLASH_CR_SER); + FLASH->CR &= SECTOR_MASK; + + if(status != HAL_OK) + { + /* In case of error, stop erase procedure and return the faulty sector*/ + *SectorError = index; + break; + } + } + } + } + + /* Process Unlocked */ + __HAL_UNLOCK(&pFlash); + + return status; +} + +/** + * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled + * @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that + * contains the configuration information for the erasing. + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Process Locked */ + __HAL_LOCK(&pFlash); + + /* Check the parameters */ + assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); + + /* Enable End of FLASH Operation interrupt */ + __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP); + + /* Enable Error source interrupt */ + __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR); + + /* Clear pending flags (if any) */ + __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\ + FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR); + + if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) + { + /*Mass erase to be done*/ + pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE; + pFlash.Bank = pEraseInit->Banks; + FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks); + } + else + { + /* Erase by sector to be done*/ + + /* Check the parameters */ + assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); + + pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE; + pFlash.NbSectorsToErase = pEraseInit->NbSectors; + pFlash.Sector = pEraseInit->Sector; + pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange; + + /*Erase 1st sector and wait for IT*/ + FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange); + } + + return status; +} + +/** + * @brief Program option bytes + * @param pOBInit: pointer to an FLASH_OBInitStruct structure that + * contains the configuration information for the programming. + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit) +{ + HAL_StatusTypeDef status = HAL_ERROR; + + /* Process Locked */ + __HAL_LOCK(&pFlash); + + /* Check the parameters */ + assert_param(IS_OPTIONBYTE(pOBInit->OptionType)); + + /*Write protection configuration*/ + if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP) + { + assert_param(IS_WRPSTATE(pOBInit->WRPState)); + if(pOBInit->WRPState == OB_WRPSTATE_ENABLE) + { + /*Enable of Write protection on the selected Sector*/ + status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks); + } + else + { + /*Disable of Write protection on the selected Sector*/ + status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks); + } + } + + /*Read protection configuration*/ + if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP) + { + status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel); + } + + /*USER configuration*/ + if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER) + { + status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW, + pOBInit->USERConfig&OB_STOP_NO_RST, + pOBInit->USERConfig&OB_STDBY_NO_RST); + } + + /*BOR Level configuration*/ + if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR) + { + status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel); + } + + /* Process Unlocked */ + __HAL_UNLOCK(&pFlash); + + return status; +} + +/** + * @brief Get the Option byte configuration + * @param pOBInit: pointer to an FLASH_OBInitStruct structure that + * contains the configuration information for the programming. + * + * @retval None + */ +void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit) +{ + pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR; + + /*Get WRP*/ + pOBInit->WRPSector = FLASH_OB_GetWRP(); + + /*Get RDP Level*/ + pOBInit->RDPLevel = FLASH_OB_GetRDP(); + + /*Get USER*/ + pOBInit->USERConfig = FLASH_OB_GetUser(); + + /*Get BOR Level*/ + pOBInit->BORLevel = FLASH_OB_GetBOR(); +} + +#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) ||\ + defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) +/** + * @brief Program option bytes + * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that + * contains the configuration information for the programming. + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_AdvOBProgram (FLASH_AdvOBProgramInitTypeDef *pAdvOBInit) +{ + HAL_StatusTypeDef status = HAL_ERROR; + + /* Check the parameters */ + assert_param(IS_OBEX(pAdvOBInit->OptionType)); + + /*Program PCROP option byte*/ + if(((pAdvOBInit->OptionType) & OPTIONBYTE_PCROP) == OPTIONBYTE_PCROP) + { + /* Check the parameters */ + assert_param(IS_PCROPSTATE(pAdvOBInit->PCROPState)); + if((pAdvOBInit->PCROPState) == OB_PCROP_STATE_ENABLE) + { + /*Enable of Write protection on the selected Sector*/ +#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) + status = FLASH_OB_EnablePCROP(pAdvOBInit->Sectors); +#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */ + status = FLASH_OB_EnablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks); +#endif /* STM32F401xC || STM32F401xE || STM32F411xE */ + } + else + { + /*Disable of Write protection on the selected Sector*/ +#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) + status = FLASH_OB_DisablePCROP(pAdvOBInit->Sectors); +#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */ + status = FLASH_OB_DisablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks); +#endif /* STM32F401xC || STM32F401xE || STM32F411xE */ + } + } + +#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) + /*Program BOOT config option byte*/ + if(((pAdvOBInit->OptionType) & OPTIONBYTE_BOOTCONFIG) == OPTIONBYTE_BOOTCONFIG) + { + status = FLASH_OB_BootConfig(pAdvOBInit->BootConfig); + } +#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */ + + return status; +} + +/** + * @brief Get the OBEX byte configuration + * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that + * contains the configuration information for the programming. + * + * @retval None + */ +void HAL_FLASHEx_AdvOBGetConfig(FLASH_AdvOBProgramInitTypeDef *pAdvOBInit) +{ +#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) + /*Get Sector*/ + pAdvOBInit->Sectors = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); +#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */ + /*Get Sector for Bank1*/ + pAdvOBInit->SectorsBank1 = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); + + /*Get Sector for Bank2*/ + pAdvOBInit->SectorsBank2 = (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); + + /*Get Boot config OB*/ + pAdvOBInit->BootConfig = *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS; +#endif /* STM32F401xC || STM32F401xE || STM32F411xE */ +} + +/** + * @brief Select the Protection Mode + * + * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted + * Global Read Out Protection modification (from level1 to level0) + * @note Once SPRMOD bit is active unprotection of a protected sector is not possible + * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag + * @note This function can be used only for STM32F427xx/STM32F429xx/STM32F437xx/STM32F439xx/STM32F401xx devices. + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_OB_SelectPCROP(void) +{ + uint8_t optiontmp = 0xFF; + + /* Mask SPRMOD bit */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F); + + /* Update Option Byte */ + *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_SELECTED | optiontmp); + + return HAL_OK; +} + +/** + * @brief Deselect the Protection Mode + * + * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted + * Global Read Out Protection modification (from level1 to level0) + * @note Once SPRMOD bit is active unprotection of a protected sector is not possible + * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag + * @note This function can be used only for STM32F427xx/STM32F429xx/STM32F437xx/STM32F439xx/STM32F401xx devices. + * + * @retval HAL Status + */ +HAL_StatusTypeDef HAL_FLASHEx_OB_DeSelectPCROP(void) +{ + uint8_t optiontmp = 0xFF; + + /* Mask SPRMOD bit */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F); + + /* Update Option Byte */ + *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_DESELECTED | optiontmp); + + return HAL_OK; +} +#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F401xC || STM32F401xE || STM32F411xE */ + +#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) +/** + * @brief Returns the FLASH Write Protection Option Bytes value for Bank 2 + * @note This function can be used only for STM32F427X and STM32F429X devices. + * @retval The FLASH Write Protection Option Bytes value + */ +uint16_t HAL_FLASHEx_OB_GetBank2WRP(void) +{ + /* Return the FLASH write protection Register value */ + return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); +} +#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */ + +/** + * @} + */ + +#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) +/** + * @brief Full erase of FLASH memory sectors + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @param Banks: Banks to be erased + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: Bank1 to be erased + * @arg FLASH_BANK_2: Bank2 to be erased + * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased + * + * @retval HAL Status + */ +static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks) +{ + uint32_t tmp_psize = 0; + + /* Check the parameters */ + assert_param(IS_VOLTAGERANGE(VoltageRange)); + assert_param(IS_FLASH_BANK(Banks)); + + /* if the previous operation is completed, proceed to erase all sectors */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + if(Banks == FLASH_BANK_BOTH) + { + /* bank1 & bank2 will be erased*/ + FLASH->CR |= FLASH_MER_BIT; + } + else if(Banks == FLASH_BANK_1) + { + /*Only bank1 will be erased*/ + FLASH->CR |= FLASH_CR_MER1; + } + else + { + /*Only bank2 will be erased*/ + FLASH->CR |= FLASH_CR_MER2; + } + FLASH->CR |= FLASH_CR_STRT; +} + +/** + * @brief Erase the specified FLASH memory sector + * @param Sector: FLASH sector to erase + * The value of this parameter depend on device used within the same series + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval None + */ +void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0; + + /* Check the parameters */ + assert_param(IS_FLASH_SECTOR(Sector)); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == FLASH_VOLTAGE_RANGE_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == FLASH_VOLTAGE_RANGE_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == FLASH_VOLTAGE_RANGE_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + + /* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */ + if(Sector > FLASH_SECTOR_11) + { + Sector += 4; + } + /* If the previous operation is completed, proceed to erase the sector */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR &= SECTOR_MASK; + FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB)); + FLASH->CR |= FLASH_CR_STRT; +} + +/** + * @brief Enable the write protection of the desired bank1 or bank 2 sectors + * + * @note When the memory read protection level is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param WRPSector: specifies the sector(s) to be write protected. + * This parameter can be one of the following values: + * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 + * @arg OB_WRP_SECTOR_All + * @note BANK2 starts from OB_WRP_SECTOR_12 + * + * @param Banks: Enable write protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: WRP on all sectors of bank1 + * @arg FLASH_BANK_2: WRP on all sectors of bank2 + * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 + * + * @retval HAL FLASH State + */ +static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_WRP_SECTOR(WRPSector)); + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) || + (WRPSector < OB_WRP_SECTOR_12)) + { + if(WRPSector == OB_WRP_SECTOR_All) + { + /*Write protection on all sector of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12)); + } + else + { + /*Write protection done on sectors of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector); + } + } + else + { + /*Write protection done on sectors of BANK2*/ + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12)); + } + + /*Write protection on all sector of BANK2*/ + if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH)) + { + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12)); + } + } + + } + return status; +} + +/** + * @brief Disable the write protection of the desired bank1 or bank 2 sectors + * + * @note When the memory read protection level is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param WRPSector: specifies the sector(s) to be write protected. + * This parameter can be one of the following values: + * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 + * @arg OB_WRP_Sector_All + * @note BANK2 starts from OB_WRP_SECTOR_12 + * + * @param Banks: Disable write protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: Bank1 to be erased + * @arg FLASH_BANK_2: Bank2 to be erased + * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_WRP_SECTOR(WRPSector)); + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) || + (WRPSector < OB_WRP_SECTOR_12)) + { + if(WRPSector == OB_WRP_SECTOR_All) + { + /*Write protection on all sector of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); + } + else + { + /*Write protection done on sectors of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector; + } + } + else + { + /*Write protection done on sectors of BANK2*/ + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); + } + + /*Write protection on all sector of BANK2*/ + if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH)) + { + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); + } + } + + } + + return status; +} + +/** + * @brief Configure the Dual Bank Boot. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @param BootConfig specifies the Dual Bank Boot Option byte. + * This parameter can be one of the following values: + * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable + * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled + * @retval None + */ +static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_BOOT(BootConfig)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + /* Set Dual Bank Boot */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2); + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= BootConfig; + } + + return status; +} + +/** + * @brief Enable the read/write protection (PCROP) of the desired + * sectors of Bank 1 and/or Bank 2. + * @note This function can be used only for STM32F42xxx/43xxx devices. + * @param SectorBank1 Specifies the sector(s) to be read/write protected or unprotected for bank1. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 + * @arg OB_PCROP_SECTOR__All + * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 + * @arg OB_PCROP_SECTOR__All + * @param Banks Enable PCROP protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: WRP on all sectors of bank1 + * @arg FLASH_BANK_2: WRP on all sectors of bank2 + * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH)) + { + assert_param(IS_OB_PCROP(SectorBank1)); + /*Write protection done on sectors of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)SectorBank1; + } + else + { + assert_param(IS_OB_PCROP(SectorBank2)); + /*Write protection done on sectors of BANK2*/ + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2; + } + + /*Write protection on all sector of BANK2*/ + if(Banks == FLASH_BANK_BOTH) + { + assert_param(IS_OB_PCROP(SectorBank2)); + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + /*Write protection done on sectors of BANK2*/ + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2; + } + } + + } + + return status; +} + + +/** + * @brief Disable the read/write protection (PCROP) of the desired + * sectors of Bank 1 and/or Bank 2. + * @note This function can be used only for STM32F42xxx/43xxx devices. + * @param SectorBank1 specifies the sector(s) to be read/write protected or unprotected for bank1. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 + * @arg OB_PCROP_SECTOR__All + * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 + * @arg OB_PCROP_SECTOR__All + * @param Banks Disable PCROP protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: WRP on all sectors of bank1 + * @arg FLASH_BANK_2: WRP on all sectors of bank2 + * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH)) + { + assert_param(IS_OB_PCROP(SectorBank1)); + /*Write protection done on sectors of BANK1*/ + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~SectorBank1); + } + else + { + /*Write protection done on sectors of BANK2*/ + assert_param(IS_OB_PCROP(SectorBank2)); + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2); + } + + /*Write protection on all sector of BANK2*/ + if(Banks == FLASH_BANK_BOTH) + { + assert_param(IS_OB_PCROP(SectorBank2)); + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + /*Write protection done on sectors of BANK2*/ + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2); + } + } + + } + + return status; + +} + +#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */ + +#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx)|| defined(STM32F417xx) ||\ + defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) +/** + * @brief Mass erase of FLASH memory + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @param Banks: Banks to be erased + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: Bank1 to be erased + * + * @retval None + */ +static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks) +{ + uint32_t tmp_psize = 0; + + /* Check the parameters */ + assert_param(IS_VOLTAGERANGE(VoltageRange)); + assert_param(IS_FLASH_BANK(Banks)); + + /* If the previous operation is completed, proceed to erase all sectors */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR |= FLASH_CR_MER; + FLASH->CR |= FLASH_CR_STRT; +} + +/** + * @brief Erase the specified FLASH memory sector + * @param Sector: FLASH sector to erase + * The value of this parameter depend on device used within the same series + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval None + */ +void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0; + + /* Check the parameters */ + assert_param(IS_FLASH_SECTOR(Sector)); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == FLASH_VOLTAGE_RANGE_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == FLASH_VOLTAGE_RANGE_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == FLASH_VOLTAGE_RANGE_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + + /* If the previous operation is completed, proceed to erase the sector */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR &= SECTOR_MASK; + FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB)); + FLASH->CR |= FLASH_CR_STRT; +} + +/** + * @brief Enable the write protection of the desired bank 1 sectors + * + * @note When the memory read protection level is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param WRPSector: specifies the sector(s) to be write protected. + * The value of this parameter depend on device used within the same series + * + * @param Banks: Enable write protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: WRP on all sectors of bank1 + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_WRP_SECTOR(WRPSector)); + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector); + } + + return status; +} + +/** + * @brief Disable the write protection of the desired bank 1 sectors + * + * @note When the memory read protection level is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param WRPSector: specifies the sector(s) to be write protected. + * The value of this parameter depend on device used within the same series + * + * @param Banks: Enable write protection on all the sectors for the specific bank + * This parameter can be one of the following values: + * @arg FLASH_BANK_1: WRP on all sectors of bank1 + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_WRP_SECTOR(WRPSector)); + assert_param(IS_FLASH_BANK(Banks)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector; + } + + return status; +} +#endif /* STM32F405xx || STM32F415xx || STM32F407xx || STM32F417xx || STM32F401xC || STM32F401xE || STM32F411xE */ + +#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE) +/** + * @brief Enable the read/write protection (PCROP) of the desired sectors. + * @note This function can be used only for STM32F401xx devices. + * @param Sector specifies the sector(s) to be read/write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5 + * @arg OB_PCROP_Sector_All + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_PCROP(Sector)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)Sector; + } + + return status; +} + + +/** + * @brief Disable the read/write protection (PCROP) of the desired sectors. + * @note This function can be used only for STM32F401xx devices. + * @param Sector specifies the sector(s) to be read/write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5 + * @arg OB_PCROP_Sector_All + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_PCROP(Sector)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~Sector); + } + + return status; + +} +#endif /* STM32F401xC || STM32F401xE || STM32F411xE */ + +/** + * @brief Set the read protection level. + * @param Level: specifies the read protection level. + * This parameter can be one of the following values: + * @arg OB_RDP_LEVEL_0: No protection + * @arg OB_RDP_LEVEL_1: Read protection of the memory + * @arg OB_RDP_LEVEL_2: Full chip protection + * + * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0 + * + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level) +{ + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_RDP_LEVEL(Level)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level; + } + + return status; +} + +/** + * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY. + * @param Iwdg: Selects the IWDG mode + * This parameter can be one of the following values: + * @arg OB_IWDG_SW: Software IWDG selected + * @arg OB_IWDG_HW: Hardware IWDG selected + * @param Stop: Reset event when entering STOP mode. + * This parameter can be one of the following values: + * @arg OB_STOP_NO_RST: No reset generated when entering in STOP + * @arg OB_STOP_RST: Reset generated when entering in STOP + * @param Stdby: Reset event when entering Standby mode. + * This parameter can be one of the following values: + * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY + * @arg OB_STDBY_RST: Reset generated when entering in STANDBY + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby) +{ + uint8_t optiontmp = 0xFF; + HAL_StatusTypeDef status = HAL_OK; + + /* Check the parameters */ + assert_param(IS_OB_IWDG_SOURCE(Iwdg)); + assert_param(IS_OB_STOP_SOURCE(Stop)); + assert_param(IS_OB_STDBY_SOURCE(Stdby)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); + + if(status == HAL_OK) + { + /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F); + + /* Update User Option Byte */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp))); + } + + return status; + +} + +/** + * @brief Set the BOR Level. + * @param Level: specifies the Option Bytes BOR Reset Level. + * This parameter can be one of the following values: + * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V + * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V + * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V + * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V + * @retval HAL Status + */ +static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level) +{ + /* Check the parameters */ + assert_param(IS_OB_BOR_LEVEL(Level)); + + /* Set the BOR Level */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV); + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level; + + return HAL_OK; + +} + +/** + * @brief Return the FLASH User Option Byte value. + * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1) + * and RST_STDBY(Bit2). + */ +static uint8_t FLASH_OB_GetUser(void) +{ + /* Return the User Option Byte */ + return ((uint8_t)(FLASH->OPTCR & 0xE0)); +} + +/** + * @brief Return the FLASH Write Protection Option Bytes value. + * @retval uint16_t FLASH Write Protection Option Bytes value + */ +static uint16_t FLASH_OB_GetWRP(void) +{ + /* Return the FLASH write protection Register value */ + return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); +} + +/** + * @brief Returns the FLASH Read Protection level. + * @retval FlagStatus FLASH Readout Protection Status: + * - SET, when OB_RDP_Level_1 or OB_RDP_Level_2 is set + * - RESET, when OB_RDP_Level_0 is set + */ +static FlagStatus FLASH_OB_GetRDP(void) +{ + FlagStatus readstatus = RESET; + + if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) != (uint8_t)OB_RDP_LEVEL_0)) + { + readstatus = SET; + } + + return readstatus; +} + +/** + * @brief Returns the FLASH BOR level. + * @retval uint8_t The FLASH BOR level: + * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V + * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V + * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V + * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V + */ +static uint8_t FLASH_OB_GetBOR(void) +{ + /* Return the FLASH BOR level */ + return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C); +} + +/** + * @} + */ + +#endif /* HAL_FLASH_MODULE_ENABLED */ + +/** + * @} + */ + +/** + * @} + */ + +/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/