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hwOS tech 3.22 release
author | heinrichsweikamp |
---|---|
date | Mon, 29 Apr 2024 13:05:18 +0200 (7 months ago) |
parents | 75e90cd0c2c3 |
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;============================================================================= ; ; File eeprom_rs232.inc * combined next generation V3.09.4n ; ; ; Copyright (c) 2011, JD Gascuel, heinrichs weikamp gmbh, all right reserved. ;============================================================================= ; HISTORY ; 2011-08-03 : [mH] moving from OSTC code ; -------------------------------------------------------------------------------------------- ; EEPROM Defines ; -------------------------------------------------------------------------------------------- #DEFINE DECO_DATA_VALID_TOKEN 0x55 ; deco data valid #DEFINE DECO_DATA_INVALID_TOKEN 0xAA ; deco data invalid ; -------------------------------------------------------------------------------------------- ; EEPROM Memory Map ; -------------------------------------------------------------------------------------------- ; Label EEPROM Address Size Description ; bank 1+2: settings & options ; ---------------------------- +--- do not change the position of these data! #DEFINE eeprom_ostc_serial 0x000 ; | 2 OSTC dive computer unique serial number #DEFINE eeprom_num_dives 0x002 ; | 2 total number of dives #DEFINE eeprom_log_pointer 0x004 ; | 3 pointer used for accessing log data in external flash #DEFINE eeprom_battery_gauge 0x007 ; | 6 backup storage for the battery gauge meter #DEFINE eeprom_log_offset 0x00D ; | 2 offset between OSTC dive counting and user's counting #DEFINE eeprom_battery_type 0x00F ; | 1 battery type inside the OSTC #DEFINE eeprom_options_version 0x010 ; 2 options version identifier #DEFINE eeprom_fw_chksum_current 0x012 ; 6 checksum of the current firmware *) #DEFINE eeprom_charge_cycles 0x018 ; 2 16bit charge cycles (Reset with "new battery") #DEFINE eeprom_options_storage 0x01A ; 486 backup storage for the options ; bank 2: deco data backup ; ------------------------ #DEFINE eeprom_deco_data_validity 0x200 ; 1 deco data validity #DEFINE eeprom_deco_data_version 0x201 ; 1 deco data format version #DEFINE eeprom_deco_data_timestamp 0x202 ; 6 date/time of deco data #DEFINE eeprom_deco_data_surfinterval 0x208 ; 2 surface interval ; 0x20A ; 6 unused #DEFINE eeprom_deco_data_bank3 0x210 ; 9 desaturation status ; 0x219 ; 1 unused #DEFINE eeprom_deco_data_bank5 0x21A ; 4 CNS ; 0x21E ; 2 unused #DEFINE eeprom_deco_data_bank7 0x220 ; 128 tissue pressures ; 0x2A0 ; 96 unused ; bank 3: flash backup & factory use ; ---------------------------------- #DEFINE eeprom_prog_page0_backup 0x300 ; 128 backup storage for the first program memory page ; 0x380 ; 1 unused #DEFINE eeprom_button_polarity 0x381 ; 1 button polarity (factory use only, do not change position!) #DEFINE eeprom_fw_chksum_recovry 0x382 ; 6 checksum of stored recovery firmware *) ; 0x388 ; 121 unused ; *) 4 byte code checksum, 1 byte checksum of the checksum, 1 byte firmware ID ; -------------------------------------------------------------------------------------------- ; ; EEPROM read & write Macros ; ; -------------------------------------------------------------------------------------------- ;----------------------------------------------------------------------------- ; read 1 byte from EEPROM to memory ; ; eeprom_address: address:2 containing source address in EEPROM ; memory_address: address:2 containing target address in memory ; EEPROM_CC_READ macro eeprom_address, memory_address movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM call read_eeprom ; read from EEPROM movff EEDATA,memory_address ; store to memory endm ;----------------------------------------------------------------------------- ; read 2 bytes from EEPROM to memory, both bytes need to be in same EEPROM bank ; ; eeprom_address: address:2 containing start address in EEPROM ; memory_address: address:2 containing start address in memory ; EEPROM_II_READ macro eeprom_address, memory_address movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw .2 ; read 2 bytes call eeprom_read_common ; execute read endm ;----------------------------------------------------------------------------- ; read 3 bytes from EEPROM to memory, all bytes need to be in same EEPROM bank ; ; eeprom_address: address:2 containing start address in EEPROM ; memory_address: address:2 containing start address in memory ; EEPROM_TT_READ macro eeprom_address, memory_address movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw .3 ; read 3 bytes call eeprom_read_common ; execute read endm ;----------------------------------------------------------------------------- ; read a range of bytes from EEPROM to memory, all bytes need to be in same EEPROM bank ; ; eeprom_address: address:2 containing start address in EEPROM ; memory_address: address:2 containing start address in memory (bank safe) ; range : number of bytes to read (1-256), will wrap-around staying in same EEPROM bank! ; EEPROM_RR_READ macro eeprom_address, memory_address, range movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw low(range) ; set size of range to read call eeprom_read_common ; execute read endm ;----------------------------------------------------------------------------- ; write 1 byte from memory to EEPROM ; ; memory_address: address:2 containing source address in memory (bank safe) ; eeprom_address: address:2 containing destination address in EEPROM ; EEPROM_CC_WRITE macro memory_address, eeprom_address movff memory_address,EEDATA ; copy byte to EEPROM data register movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM call write_eeprom ; execute write endm ;----------------------------------------------------------------------------- ; write 2 bytes from memory to EEPROM, both bytes need to go into the same EEPROM bank ; ; memory_address: address:2 containing start address in memory (bank safe) ; eeprom_address: address:2 containing start address in EEPROM ; EEPROM_II_WRITE macro memory_address, eeprom_address movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw .2 ; write 2 bytes call eeprom_write_common ; execute write endm ;----------------------------------------------------------------------------- ; write 3 bytes from memory to EEPROM, all bytes need to go into the same EEPROM bank ; ; memory_address: address:2 containing start address in memory (bank safe) ; eeprom_address: address:2 containing start address in EEPROM ; EEPROM_TT_WRITE macro memory_address, eeprom_address movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw .3 ; write 3 bytes call eeprom_write_common ; execute write endm ;----------------------------------------------------------------------------- ; write a range of bytes from memory to EEPROM, all bytes need to go into the same EEPROM bank ; ; memory_address: address:2 containing start address in memory (bank safe) ; eeprom_address: address:2 containing start address in EEPROM ; range : number of bytes to write (1-256), will wrap-around staying in same EEPROM bank! ; EEPROM_RR_WRITE macro memory_address, eeprom_address, range movlw HIGH(eeprom_address) ; extract bank in EEPROM movwf EEADRH ; set bank in EEPROM movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set start address in EEPROM lfsr FSR1,memory_address ; set start address in memory movlw low(range) ; set size of range to write call eeprom_write_common ; execute write endm ;----------------------------------------------------------------------------- ; set up EEPROM address register for subsequent read/write operations ; ; eeprom_address: address:2 containing the EEPROM address to set up ; EEPROM_SET_ADDRESS macro eeprom_address ; Set EEPROM address movlw HIGH(eeprom_address) ; extract bank in EEPROM ; for subsequent calls to movwf EEADRH ; set EEPROM bank ; write_eeprom / read_eeprom movlw LOW (eeprom_address) ; extract start address in EEPROM movwf EEADR ; set EEPROM cell endm ; -------------------------------------------------------------------------------------------- ; ; Serial Read & Write Macros ; ; -------------------------------------------------------------------------------------------- ;----------------------------------------------------------------------------- ; Receive 1 Byte and write to Memory ; ; in case of a Timeout the Flag 'rs232_rx_timeout' will be set ; SERIAL_CC_RECEIVE macro mem_address extern serial_rx_single call serial_rx_single ; (try to) receive one byte movff RCREG1,mem_address ; copy received byte to memory endm ;----------------------------------------------------------------------------- ; Stream a Range of Bytes to Memory ; ; in case of a Timeout the Flag 'rs232_rx_timeout' will be set ; ; mem_address: address:2 containing the start address in memory (bank safe) ; range : number of bytes to receive (1-256) ; SERIAL_RR_RECEIVE macro mem_address, range lfsr FSR2,mem_address ; set start address in memory movlw low(range) ; set number of bytes to receive extern serial_rx_stream call serial_rx_stream endm ;----------------------------------------------------------------------------- ; Send 1 Byte Literal ; SERIAL_LC_SEND macro literal call rs232_wait_tx ; wait for completion of last transmit movlw literal ; load literal movwf TXREG1 ; send literal to serial TX endm ;----------------------------------------------------------------------------- ; Send 1 Byte from Memory ; ; mem_address: address:2 containing the source address in memory (bank safe) ; SERIAL_CC_SEND macro mem_address call rs232_wait_tx ; wait for completion of last transmit movff mem_address,TXREG1 ; send byte from memory to serial TX endm ;----------------------------------------------------------------------------- ; Send a Range of Bytes from Memory ; ; mem_address: address:2 containing the start address in memory (bank safe) ; range : number of bytes to send (1-256) ; SERIAL_RR_SEND macro mem_address, range lfsr FSR2,mem_address ; set start address in memory movlw low(range) ; set number of bytes to send extern serial_tx_steam call serial_tx_steam endm ; -------------------------------------------------------------------------------------------- ; EXTERN Directives ; -------------------------------------------------------------------------------------------- IFNDEF INSIDE_EEPROM_RS232 ; EEPROM - basic read & write extern eeprom_read_common extern eeprom_write_common extern read_eeprom extern write_eeprom ; EEPROM high-level access extern eeprom_serial_number_read extern eeprom_total_dives_read extern eeprom_total_dives_write extern eeprom_log_offset_read extern eeprom_log_offset_write extern eeprom_battery_gauge_read extern eeprom_battery_gauge_write extern eeprom_deco_data_read extern eeprom_deco_data_write ; Serial - IR / S8 extern enable_ir_s8_analog extern disable_ir_s8_analog extern ir_s8_tx_single ; Serial - RS232 (USB / BT) extern enable_rs232 extern disable_rs232 extern rs232_wait_tx extern ble2_configure ENDIF ; INSIDE_EEPROM_RS232