Mercurial > public > hwos_code
view src/external_flash.asm @ 570:c8ea60294175
react to external S8 HUD disconnect or failure in surface mode
| author | heinrichsweikamp |
|---|---|
| date | Sun, 11 Feb 2018 11:52:50 +0100 |
| parents | 9c54849b8d3b |
| children | b455b31ce022 |
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;============================================================================= ; ; File external_flash.asm ; ; External flash ; ; Copyright (c) 2011, JD Gascuel, HeinrichsWeikamp, all right reserved. ;============================================================================= ; HISTORY ; 2011-08-12 : [mH] creation #include "hwos.inc" #include "wait.inc" basic CODE ;============================================================================= global incf_ext_flash_address_p1 incf_ext_flash_address_p1: ; Increase by one movlw .1 global incf_ext_flash_address0 incf_ext_flash_address0: addwf ext_flash_address+0,F ; increase address movlw d'0' addwfc ext_flash_address+1,F addwfc ext_flash_address+2,F movlw 0x40 cpfseq ext_flash_address+2 ; at address 40FFFF? return ; No, return ; clrf ext_flash_address+0 ; clrf ext_flash_address+1 clrf ext_flash_address+2 ; Yes, rollover to 0x000000 return global incf_ext_flash_address0_p1_0x20 incf_ext_flash_address0_p1_0x20: ; Increase by one movlw .1 global incf_ext_flash_address0_0x20 incf_ext_flash_address0_0x20: ; with roll-over at 0x200000 to 0x000000 addwf ext_flash_address+0,F ; increase address movlw d'0' addwfc ext_flash_address+1,F addwfc ext_flash_address+2,F movlw 0x20 cpfseq ext_flash_address+2 ; at address 0x200000? return ; No, return ; clrf ext_flash_address+0 ; clrf ext_flash_address+1 clrf ext_flash_address+2 ; Yes, rollover to 0x000000 return global decf_ext_flash_address0 decf_ext_flash_address0: subwf ext_flash_address+0,F ; decrease address: do a 16-8bits substract. movlw d'0' subwfb ext_flash_address+1,F movlw d'0' subwfb ext_flash_address+2,F btfss ext_flash_address+2,7 ; Rollover to 0xFFFFFF? return ; No, return clrf ext_flash_address+2 ; Set to 0x00FFFFF setf ext_flash_address+1 setf ext_flash_address+0 return global ext_flash_byte_read_plus ; Return data read in WREG and SSP2BUF and ext_flash_byte_read_plus: ; increase address after read rcall ext_flash_byte_read movwf temp1 ; store received data bra incf_ext_flash_address_p1 ; +1 and return global ext_flash_byte_read_plus_0x20; Return data read in WREG and SSP2BUF and ext_flash_byte_read_plus_0x20: ; increase address after read with banking at 0x200000 rcall ext_flash_byte_read movwf temp1 ; store received data bra incf_ext_flash_address0_p1_0x20 ;+1 and return global ext_flash_byte_read ; Return data read in WREG ext_flash_byte_read: movlw 0x03 ; Read command rcall write_spi rcall ext_flash_write_address ; Write 24bit address ext_flash_address:3 via SPI rcall write_spi ; Dummy write to read data into WREG bsf flash_ncs ; CS=1 movwf temp1 return ; Return data read in WREG and temp1 ext_flash_write_address: ; Write 24bit address ext_flash_address:3 via SPI movf ext_flash_address+2,W ; 24Bit Address rcall write_spi movf ext_flash_address+1,W rcall write_spi movf ext_flash_address+0,W bra write_spi ; And return.... global ext_flash_read_block_start ; Return data read in WREG ext_flash_read_block_start: movlw 0x03 ; Read command rcall write_spi rcall ext_flash_write_address ; Write 24bit address ext_flash_address:3 via SPI rcall write_spi ; Dummy write to read data into WREG return ; Return data read in WREG global ext_flash_read_block ; Return data read in WREG ext_flash_read_block: rcall incf_ext_flash_address_p1 ; Increase address +1 bra write_spi1 ; Dummy write to read data into WREG and return global ext_flash_read_block_stop ; Return data read in WREG ext_flash_read_block_stop: bsf flash_ncs ; CS=1 return ; NO data in WREG global write_byte_ext_flash_plus_header write_byte_ext_flash_plus_header: ; Write from WREG and increase address after write movwf temp1 ; store data ; test if write is done at first byte of 4kB block ; if yes -> delete 4kB block first tstfsz ext_flash_address+0 ; at 0x00? bra write_byte_ext_flash_plus_h1 ; No, normal Write movf ext_flash_address+1,W andlw 0x0F ; Mask lower nibble tstfsz WREG ; at 0x.0? bra write_byte_ext_flash_plus_h1; No, normal Write ; At beginning of 4kB block -> rease first! rcall ext_flash_erase4kB ; Erases 4kB sector @ext_flash_address:3 write_byte_ext_flash_plus_h1: movf temp1,W rcall ext_flash_byte_write ; Write the byte bra incf_ext_flash_address_p1 ; +1 and return global write_byte_ext_flash_plus_nocnt ; No increase of ext_flash_dive_counter:3 write_byte_ext_flash_plus_nocnt: movwf temp1 ; store data bra write_byte_ext_flash_plus2 global write_byte_ext_flash_plus_nodel ; Does NOT delete 4kB Page when required write_byte_ext_flash_plus_nodel: ; Write from WREG and increase address after write with banking at 0x200000 movwf temp1 ; store data bra write_byte_ext_flash_plus1 ; Ignore possible begin of 4kB page, there have been written 0xFF already global write_byte_ext_flash_plus ; Write from WREG and increase address after write with banking at 0x200000 write_byte_ext_flash_plus: movwf temp1 ; store data ; First, increase dive length counter incf ext_flash_dive_counter+0,F movlw .0 addwfc ext_flash_dive_counter+1,F addwfc ext_flash_dive_counter+2,F ; 24bit++ write_byte_ext_flash_plus2: ; Now test if write is done at first byte of 4kB block ; if yes -> delete 4kB block first tstfsz ext_flash_address+0 ; at 0x00? bra write_byte_ext_flash_plus1 ; No, normal Write movf ext_flash_address+1,W andlw 0x0F ; Mask lower nibble tstfsz WREG ; at 0x.0? bra write_byte_ext_flash_plus1 ; No, normal Write ; At beginning of 4kB block -> erase first! rcall ext_flash_erase4kB ; Erases 4kB sector @ext_flash_address:3 write_byte_ext_flash_plus1: movf temp1,W rcall ext_flash_byte_write ; Write the byte bra incf_ext_flash_address0_p1_0x20 ; +1 and roll over at 0x200000 to 0x000000 and return global ext_flash_byte_write ; Write from WREG ext_flash_byte_write: movwf temp1 ; store data byte bsf flash_ncs ; CS=1 movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x02 ; Write (PP, Page-Program) command rcall write_spi rcall ext_flash_write_address ; Write 24bit address ext_flash_address:3 via SPI movf temp1,W ; load data byte rcall write_spi ; write one byte of data! bra ext_flash_wait_write ; And return... global ext_flash_byte_write_comms ; without wait, ~86us fixed delay due to 115200 Bauds ext_flash_byte_write_comms: movwf temp1 ; store data byte bsf flash_ncs ; CS=1 movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x02 ; Write (PP, Page-Program) command rcall write_spi rcall ext_flash_write_address ; Write 24bit address ext_flash_address:3 via SPI movf temp1,W ; load data byte rcall write_spi ; write one byte of data! bsf flash_ncs ; CS=1 return global ext_flash_disable_protection ; Disable write protection ext_flash_disable_protection: ; unlock old memory bsf flash_ncs ; CS=1 movlw 0x50 ; EWSR command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x01 ; WRSR command rcall write_spi movlw b'00000000' ; New status rcall write_spi bsf flash_ncs ; CS=1 ; unlock new memory movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x98 ; ULBPR command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x42 ; WBPR command rcall write_spi movlw .18 movwf temp2 ext_flash_disable_protection2: movlw 0x00 rcall write_spi decfsz temp2,F ; 18 bytes with 0x00 bra ext_flash_disable_protection2 bsf flash_ncs ; CS=1 return global ext_flash_enable_protection ext_flash_enable_protection: ; lock old memory bsf flash_ncs ; CS=1 movlw 0x50 ; EWSR command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x01 ; WRSR command rcall write_spi movlw b'00011100' ; New status (Write protect on) rcall write_spi bsf flash_ncs ; CS=1 ; lock new memory ; movlw 0x06 ; WREN command ; rcall write_spi ; bsf flash_ncs ; CS=1 ; movlw 0x8D ; LBPR command ; rcall write_spi ; bsf flash_ncs ; CS=1 movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x42 ; WBPR command rcall write_spi movlw .18 movwf temp2 ext_flash_enable_protection2: movlw 0xFF rcall write_spi decfsz temp2,F ; 18 bytes with 0xFF bra ext_flash_enable_protection2 bsf flash_ncs ; CS=1 return global ext_flash_erase4kB ; Erases 4kB sector ext_flash_erase4kB: bsf flash_ncs ; CS=1 movlw 0x06 ; WREN command rcall write_spi bsf flash_ncs ; CS=1 movlw 0x20 ; Sector erase command rcall write_spi rcall ext_flash_write_address ; Write 24bit address ext_flash_address:3 via SPI ; bra ext_flash_wait_write ; Wait for write... and return ext_flash_wait_write: bsf flash_ncs ; CS=1 ; WAITMS d'1' ; TBE/TSE=25ms... movlw 0x05 ; RDSR command rcall write_spi ; Read status rcall write_spi ; Read status into WREG bsf flash_ncs ; CS=1 btfsc SSP2BUF,0 ; Write operation in process? bra ext_flash_wait_write ; Yes, wait more.. return global ext_flash_erase_logbook ; erases logbook memory (000000h -> 2FFFFFh -> 3MByte -> 3145728 Bytes) ext_flash_erase_logbook: bsf flash_ncs ; CS=1 clrf ext_flash_address+0 clrf ext_flash_address+1 clrf ext_flash_address+2 setf temp1 ; 256*12kB=3145728 Bytes ext_flash_erase_logbook_loop: rcall ext_flash_erase4kB ; 4kB rcall ext_flash_add_4kB ; Increase ext_flash_address:3 by 4kB rcall ext_flash_erase4kB ; 4kB rcall ext_flash_add_4kB ; Increase ext_flash_address:3 by 4kB rcall ext_flash_erase4kB ; 4kB rcall ext_flash_add_4kB ; Increase ext_flash_address:3 by 4kB decfsz temp1,F bra ext_flash_erase_logbook_loop return ext_flash_add_4kB: movlw 0x10 addwf ext_flash_address+1,F movlw d'0' addwfc ext_flash_address+2,F return write_spi: ; With data in WREG... bcf flash_ncs ; CS global write_spi1 write_spi1: ; With data in WREG... bcf SSP2STAT,WCOL ; Clear flag movwf SSP2BUF ; Write to buffer btfsc SSP2STAT,WCOL ; Was buffer full? bra write_spi1 ; Yes, try again write_spi2: ; Wait for write command btfss SSP2STAT, BF ; Buffer full? bra write_spi2 ; No, wait. movf SSP2BUF,W return ; Returns RX data in WREG and SSP2BUF END