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1 ;=============================================================================
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2 ;
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631
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3 ; File eeprom_rs232.inc combined next generation V3.08.8
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4 ;
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5 ;
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6 ; Copyright (c) 2011, JD Gascuel, HeinrichsWeikamp, all right reserved.
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7 ;=============================================================================
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8 ; HISTORY
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9 ; 2011-08-03 : [mH] moving from OSTC code
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10
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582
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11
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631
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12 ; --------------------------------------------------------------------------------------------
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13 ; EEPROM read & write Macros
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14 ; --------------------------------------------------------------------------------------------
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15
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16
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17 ; read 1 byte from EEPROM to memory
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18 ;
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19 ; eeprom_address: address:2 containing source address in EEPROM
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20 ; memory_address: address:2 containing target address in memory
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21 ;
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22 EEPROM_CC_READ macro eeprom_address, memory_address
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23 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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24 movwf EEADRH ; set bank in EEPROM
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25 movlw LOW (eeprom_address) ; extract start address in EEPROM
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26 movwf EEADR ; set start address in EEPROM
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27 call read_eeprom ; read from EEPROM
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28 movff EEDATA,memory_address ; store to memory
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29 endm
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30
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31
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32 ; read 2 bytes from EEPROM to memory, both bytes must be in same EEPROM bank
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33 ;
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34 ; eeprom_address: address:2 containing start address in EEPROM
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35 ; memory_address: address:2 containing start address in memory
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36 ;
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37 EEPROM_II_READ macro eeprom_address, memory_address
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38 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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39 movwf EEADRH ; set bank in EEPROM
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40 movlw LOW (eeprom_address) ; extract start address in EEPROM
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41 movwf EEADR ; set start address in EEPROM
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42 lfsr FSR1,memory_address ; set start address in memory
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43 movlw .2 ; read 2 bytes
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44 call eeprom_read_common ; execute read
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45 endm
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46
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47
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48 ; read 3 bytes from EEPROM to memory, all bytes must be in same EEPROM bank
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49 ;
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50 ; eeprom_address: address:2 containing start address in EEPROM
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51 ; memory_address: address:2 containing start address in memory
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52 ;
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53 EEPROM_TT_READ macro eeprom_address, memory_address
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54 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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55 movwf EEADRH ; set bank in EEPROM
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56 movlw LOW (eeprom_address) ; extract start address in EEPROM
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57 movwf EEADR ; set start address in EEPROM
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58 lfsr FSR1,memory_address ; set start address in memory
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59 movlw .3 ; read 3 bytes
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60 call eeprom_read_common ; execute read
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61 endm
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62
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63
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64 ; read a range of bytes from EEPROM to memory, all bytes must be in same EEPROM bank
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65 ;
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66 ; eeprom_address: address:2 containing start address in EEPROM
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67 ; memory_address: address:2 containing start address in memory (bank safe)
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68 ; range : number of bytes to read (1-256), will wrap-around staying in same EEPROM bank!
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69 ;
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70 EEPROM_RR_READ macro eeprom_address, memory_address, range
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71 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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72 movwf EEADRH ; set bank in EEPROM
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73 movlw LOW (eeprom_address) ; extract start address in EEPROM
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74 movwf EEADR ; set start address in EEPROM
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75 lfsr FSR1,memory_address ; set start address in memory
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76 movlw low(range) ; set size of range to read
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77 call eeprom_read_common ; execute read
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78 endm
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79
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80
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81 ; write 1 byte from memory to EEPROM
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82 ;
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83 ; memory_address: address:2 containing source address in memory (bank safe)
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84 ; eeprom_address: address:2 containing destination address in EEPROM
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85 ;
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86 EEPROM_CC_WRITE macro memory_address, eeprom_address
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87 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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88 movwf EEADRH ; set bank in EEPROM
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89 movlw LOW (eeprom_address) ; extract start address in EEPROM
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90 movwf EEADR ; set start address in EEPROM
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91 movff memory_address,EEDATA ; copy byte to EEPROM data register
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92 call write_eeprom ; execute write
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93 endm
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94
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95
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96 ; write 2 bytes from memory to EEPROM, both bytes must go into the same EEPROM bank
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97 ;
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98 ; memory_address: address:2 containing start address in memory (bank safe)
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99 ; eeprom_address: address:2 containing start address in EEPROM
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100 ;
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101 EEPROM_II_WRITE macro memory_address, eeprom_address
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102 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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103 movwf EEADRH ; set bank in EEPROM
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104 movlw LOW (eeprom_address) ; extract start address in EEPROM
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105 movwf EEADR ; set start address in EEPROM
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106 lfsr FSR1,memory_address ; set start address in memory
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107 movlw .2 ; write 2 bytes
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108 call eeprom_write_common ; execute write
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109 endm
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110
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111
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112 ; write 3 bytes from memory to EEPROM, all bytes must go into the same EEPROM bank
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113 ;
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114 ; memory_address: address:2 containing start address in memory (bank safe)
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115 ; eeprom_address: address:2 containing start address in EEPROM
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116 ;
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117 EEPROM_TT_WRITE macro memory_address, eeprom_address
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118 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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119 movwf EEADRH ; set bank in EEPROM
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120 movlw LOW (eeprom_address) ; extract start address in EEPROM
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121 movwf EEADR ; set start address in EEPROM
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122 lfsr FSR1,memory_address ; set start address in memory
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123 movlw .3 ; write 3 bytes
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124 call eeprom_write_common ; execute write
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125 endm
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126
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127
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128 ; write a range of bytes from memory to EEPROM, all bytes must go into the same EEPROM bank
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129 ;
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130 ; memory_address: address:2 containing start address in memory (bank safe)
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131 ; eeprom_address: address:2 containing start address in EEPROM
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132 ; range : number of bytes to write (1-256), will wrap-around staying in same EEPROM bank!
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133 ;
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134 EEPROM_RR_WRITE macro memory_address, eeprom_address, range
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135 movlw HIGH(eeprom_address) ; extract bank in EEPROM
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136 movwf EEADRH ; set bank in EEPROM
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137 movlw LOW (eeprom_address) ; extract start address in EEPROM
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138 movwf EEADR ; set start address in EEPROM
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139 lfsr FSR1,memory_address ; set start address in memory
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140 movlw low(range) ; set size of range to write
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141 call eeprom_write_common ; execute write
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142 endm
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143
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144
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145 ; set up EEPROM address register for subsequent read/write operations
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146 ;
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147 ; eeprom_address: address:2 containing the EEPROM address to set up
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148 ;
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149 EEPROM_SET_ADDRESS macro eeprom_address ; Set EEPROM address
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150 movlw HIGH(eeprom_address) ; extract bank in EEPROM ; for subsequent calls to
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151 movwf EEADRH ; set EEPROM bank ; write_eeprom / read_eeprom
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152 movlw LOW (eeprom_address) ; extract start address in EEPROM
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153 movwf EEADR ; set EEPROM cell
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154 endm
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155
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156
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157 ; --------------------------------------------------------------------------------------------
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158 ; EEPROM Defines
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159 ; --------------------------------------------------------------------------------------------
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160
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161 #DEFINE DECO_DATA_VALID_TOKEN 0x55 ; deco data valid
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162 #DEFINE DECO_DATA_INVALID_TOKEN 0xAA ; deco data invalid
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163
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164
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165 ; --------------------------------------------------------------------------------------------
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166 ; EEPROM Memory Map
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167 ; --------------------------------------------------------------------------------------------
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168
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169 ; Label EEPROM Address Size Description
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170
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171 ; bank 1+2: settings & options
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172 ; ---------------------------- +--- do not change the position of these data!
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173 #DEFINE eeprom_ostc_serial 0x000 ; | 2 OSTC dive computer unique serial number
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174 #DEFINE eeprom_num_dives 0x002 ; | 2 total number of dives
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175 #DEFINE eeprom_log_pointer 0x004 ; | 3 pointer used for accessing log data in external flash
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176 #DEFINE eeprom_battery_gauge 0x007 ; | 6 backup storage for the battery gauge meter
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177 #DEFINE eeprom_log_offset 0x00D ; | 2 offset between OSTC dive counting and user's counting
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178 #DEFINE eeprom_battery_type 0x00F ; | 1 battery type inside the OSTC
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179 #DEFINE eeprom_options_version 0x010 ; 2 options version identifier
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180 ; 0x012 ; 8 unused
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181 #DEFINE eeprom_options_storage 0x01A ; 486 backup storage for the options
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182
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183
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184 ; bank 2: deco data backup
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185 ; ------------------------
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186 #DEFINE eeprom_deco_data_validity 0x200 ; 1 deco data validity
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187 #DEFINE eeprom_deco_data_version 0x201 ; 1 deco data format version
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188 #DEFINE eeprom_deco_data_timestamp 0x202 ; 6 date/time of deco data
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189 #DEFINE eeprom_deco_data_surfinterval 0x208 ; 2 surface interval
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190 ; 0x20A ; 6 unused
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191 #DEFINE eeprom_deco_data_bank3 0x210 ; 9 desaturation status
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192 ; 0x219 ; 1 unused
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193 #DEFINE eeprom_deco_data_bank5 0x21A ; 4 CNS
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194 ; 0x21E ; 2 unused
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195 #DEFINE eeprom_deco_data_bank7 0x220 ; 128 tissue pressures
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196 ; 0x2A0 ; 96 unused
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197
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198
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199 ; bank 3: flash backup & factory use
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200 ; ----------------------------------
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201 #DEFINE eeprom_prog_page0_backup 0x300 ; 128 backup storage for the first program memory page
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202 ; 0x380 ; 1 unused
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203 #DEFINE eeprom_button_polarity 0x381 ; 1 button polarity (factory use only, do not change position!)
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204 ; 0x382 ; 126 unused
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205
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206
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207
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208 ; --------------------------------------------------------------------------------------------
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209 ; Serial read & write Macros
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210 ; --------------------------------------------------------------------------------------------
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211
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212 ; receive 1 byte and write to memory, in case of timeout the flag 'rs232_rx_timeout' will be set
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213 ;
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214 SERIAL_CC_RECEIVE macro mem_address
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215 call rs232_get_byte ; (try to) receive one byte
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216 movff RCREG1,mem_address ; copy received byte to memory
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217 endm
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218
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219
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220 ; stream a range of bytes to memory, in case of timeout the flag 'rs232_rx_timeout' will be set
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221 ;
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222 ; mem_address: address:2 containing the start address in memory (bank safe)
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223 ; range : number of bytes to receive (1-256)
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224 ;
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225 SERIAL_RR_RECEIVE_RAM macro mem_address, range
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226 lfsr FSR2,mem_address ; set start address in memory
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227 movlw low(range) ; set number of bytes to receive
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228 extern serial_rx_stream_ram
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229 call serial_rx_stream_ram
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230 endm
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231
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232
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233
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234 ; send 1 byte literal
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235 ;
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236 SERIAL_LC_SEND macro literal
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237 call rs232_wait_tx ; wait for completion of last transmit
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238 movlw literal ; load literal
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239 movwf TXREG1 ; send literal to serial TX
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240 endm
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241
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242
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243 ; send 1 byte from memory
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244 ;
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245 ; mem_address: address:2 containing the source address in memory (bank safe)
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246 ;
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247 SERIAL_CC_SEND macro mem_address
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248 call rs232_wait_tx ; wait for completion of last transmit
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249 movff mem_address,TXREG1 ; send byte from memory to serial TX
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250 endm
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251
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252
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253 ; send a range of bytes from memory
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254 ;
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255 ; mem_address: address:2 containing the start address in memory (bank safe)
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256 ; range : number of bytes to send (1-256)
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257 ;
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258 SERIAL_RR_SEND_RAM macro mem_address, range
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259 lfsr FSR2,mem_address ; set start address in memory
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260 movlw low(range) ; set number of bytes to send
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261 extern serial_tx_ram
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262 call serial_tx_ram
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263 endm
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264
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265
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266 ; --------------------------------------------------------------------------------------------
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267 ; EXTERN Directives
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268 ; --------------------------------------------------------------------------------------------
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269
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270 IFNDEF INSIDE_EEPROM_RS232
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271
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272 ; EEPROM - basic read & write
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273
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274 extern eeprom_read_common
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275 extern eeprom_write_common
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276
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277 extern read_eeprom
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278 extern write_eeprom
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279
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280
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281 ; EEPROM high-level access
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282
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283 extern eeprom_serial_number_read
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284
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285 extern eeprom_total_dives_read
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286 extern eeprom_total_dives_write
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287
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288 extern eeprom_log_offset_read
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289 extern eeprom_log_offset_write
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290
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291 extern eeprom_battery_gauge_read
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292 extern eeprom_battery_gauge_write
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293
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294 extern eeprom_deco_data_read
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295 extern eeprom_deco_data_write
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296
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297
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298 ; Serial - IR / S8
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299
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300 extern enable_ir_s8
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301 extern disable_ir_s8
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302 extern ir_s8_wait_tx
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303
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304
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305 ; Serial - RS232 (USB / BT)
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306
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307 extern enable_rs232
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308 extern disable_rs232
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309 extern rs232_get_byte
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310 extern rs232_wait_tx
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623
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311
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629
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312
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313 ENDIF ; INSIDE_EEPROM_RS232
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